CGD65B200S2-T13 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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CGD65B200S2-T13

Single FETs, MOSFETs

Cambridge GaN Devices

650V GAN HEMT, 200MOHM, DFN5X6.

Tape & Reel (TR)

4355

Price:

$4.0950

inventory: 4355

Total number

Quantity

Price

Total price

$4.0950

$3.4380

$34.3800

100

$2.7810

$278.1000

500

$2.4750

$1,237.5000

1000

$2.1150

$2,115.0000

2000

$1.9890

$3,978.0000

5000

$1.9170

$9,585.0000

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product details

CGD65B200S2-T13

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

CGD65B200S2-T13

Single FETs, MOSFETs

Cambridge GaN Devices

650V GAN HEMT,

Single FETs, MOSFETs

Tape & Reel (TR)

4355

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Rds On (Max) @ Id, Vgs	280mOhm @ 600mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 2.75mA
Supplier Device Package	8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 12 V

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