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  • image of FET, MOSFET Arrays>NXV08A170DB2
  • image of FET, MOSFET Arrays>NXV08A170DB2
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Encapsulation
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NXV08A170DB2
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
APM12-CBA, MV7 80V, AL2O3, HALF
-
Tray
0
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$11.8620
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1

$17.1810

$17.1810

10

$15.7860

$157.8600

25

$15.1380

$378.4500

80

$12.6810

$1,014.4800

288

$11.8620

$3,416.2560

576

$11.0430

$6,360.7680

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image of FET, MOSFET Arrays>NXV08A170DB2
NXV08A170DB2
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
NXV08A170DB2
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
APM12-CBA, MV7
FET, MOSFET Arrays
Tray
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / Case12-PowerDIP Module (1.118", 28.40mm)
Mounting TypeThrough Hole
Configuration2 N-Channel (Half Bridge)
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds14000pF @ 40V
Rds On (Max) @ Id, Vgs0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageAPM12-CBA
GradeAutomotive
QualificationAEC-Q100
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