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  • image of IGBT Modules>NXH80T120L3Q0P3G
  • image of IGBT Modules>NXH80T120L3Q0P3G
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
NXH80T120L3Q0P3G
IGBT Modules
Sanyo Semiconductor/onsemi
PIM GENERATION3 Q0PACK 1200V, 80
-
Tray
0
Price:
$58.7520
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1

$58.7520

$58.7520

24

$53.4150

$1,281.9600

96

$48.0690

$4,614.6240

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product details
image of IGBT Modules>NXH80T120L3Q0P3G
NXH80T120L3Q0P3G
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
NXH80T120L3Q0P3G
IGBT Modules
Sanyo Semiconductor/onsemi
PIM GENERATION3
IGBT Modules
Tray
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 80A
NTC ThermistorYes
Supplier Device Package20-PIM/Q0PACK (55x32.5)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max188 W
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce18150 pF @ 20 V
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