SIHB6N80AE-GE3 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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SIHB6N80AE-GE3

Single FETs, MOSFETs

Vishay / Siliconix

E SERIES POWER MOSFET D2PAK (TO-

Tube

1040

Price:

$1.4400

inventory: 1040

Total number

Quantity

Price

Total price

$1.7910

$1.4400

$72.0000

100

$1.1880

$118.8000

500

$0.9990

$499.5000

1000

$0.8550

$855.0000

2000

$0.8100

$1,620.0000

5000

$0.7740

$3,870.0000

10000

$0.7560

$7,560.0000

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product details

SIHB6N80AE-GE3

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

SIHB6N80AE-GE3

Single FETs, MOSFETs

Vishay / Siliconix

E SERIES POWER

Single FETs, MOSFETs

Tube

1040

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	E
Package	Tube
Product Status	ACTIVE
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Rds On (Max) @ Id, Vgs	950mOhm @ 2A, 10V
Power Dissipation (Max)	62.5W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	800 V
Gate Charge (Qg) (Max) @ Vgs	22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	422 pF @ 100 V

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